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Kumar, Mukesh
- Effect of Oxygen Flow Rate on Structural and Optical Properties of Ta2O5 Thin Films Prepared by DC Sputtering Method
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Authors
Affiliations
1 Department of Applied Sciences, DCRUST, Murthal, IN
2 Sonepat, Electronic Science Department, Kurukshtera University, Kurukshtera, IN
1 Department of Applied Sciences, DCRUST, Murthal, IN
2 Sonepat, Electronic Science Department, Kurukshtera University, Kurukshtera, IN
Source
International Journal of Science, Engineering and Computer Technology, Vol 2, No 3 (2012), Pagination: 94-96Abstract
We have studied and characterized the process of deposition of tantalum oxide thin flim.For deposition of tantalum pentaoxide thin film we have used the DC magnetron sputtering technique. Oxygen flow rate has been varied to observe the effect on crystallinity ,deposition rate and refractive index of the deposited film. I-V characterstics have been reported using I-V set. The value of leakage current ranges from I =(0 to 2.33E-05 A) with crossponding values of electric field density E = (0 to 5 MV/Cm2). A wide energy band gap has been obtained (4.4eV ) using the transmittance of the deposited film.Keywords
Oxygen Flow Rate, Ta2O5 Thin Films, DC Sputtering Method.- The Microstructural Analysis of Infrared Irradiated CR-39 Polymer
Abstract Views :158 |
PDF Views:0
Authors
Affiliations
1 Department of Physics, Singhania University, Rajasthan, IN
2 Departments of Physics, Lovely Professional University, Phagwara, IN
3 Departments of Physics, Kanya Maha Vidyalaya, Jalandhar, IN
1 Department of Physics, Singhania University, Rajasthan, IN
2 Departments of Physics, Lovely Professional University, Phagwara, IN
3 Departments of Physics, Kanya Maha Vidyalaya, Jalandhar, IN